کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5365537 1388332 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Cobalt-induced polycrystalline silicon film growth
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Cobalt-induced polycrystalline silicon film growth
چکیده انگلیسی

Cobalt (Co)-induced crystalline silicon (Si) growth was investigated. The Co catalyst reacted to dc magnetron sputtered Si at 600 °C forming a Co silicide layer. The polycrystalline Si (poly-Si) was epitaxially grown above the Co silicide template, which has a small lattice misfit to Si. Annealing followed to improve the Si crystallinity. X-ray diffraction was performed to trace Co silicide phase formation and transition. The Co-rich silicide phase transitioned to CoSi2 by annealing. The crystallinity of Si films was identified using reflection absorption Fourier transform-infrared spectroscopy, which detected unique peaks at 689 and 566 cm−1 after the annealing process. The thin poly-Si film was used to fabricate a Schottky diode to prove the electronic quality. A good quality Si thin film was achieved by the metal-induced Si growth.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 6, 15 January 2007, Pages 3053-3056
نویسندگان
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