کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365607 | 1388333 | 2007 | 4 صفحه PDF | دانلود رایگان |
Thermoelectric properties of single crystalline CexSr1âxTiO3 films (0 â¤Â x â¤Â 0.5) have been studied by using combinatorial pulsed-laser deposition. Temperature gradient method was used for identifying an optimum growth temperature for SrTiO3 homoepitaxial growth, at which both oxygen stoichiometry and persisting layer-by-layer growth mode could be accomplished. Electrical conductivity (Ï) and Seebeck coefficient (S) were measured at room temperature for the composition-spread films grown at the optimized temperature and found to be considerably higher than those reported for bulk poly-crystalline compounds. Hall measurement revealed that carrier density linearly increased with increasing x, suggesting that a trivalent Ce ions substituted divalent Sr ions to supply electrons. A maximum power factor (S2Ï) was obtained for the x = 0.2 film, being 7 and 14 μW/K2 cm at 300 and 900 K, respectively.
Journal: Applied Surface Science - Volume 254, Issue 3, 30 November 2007, Pages 768-771