کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5365620 | 1388334 | 2012 | 5 صفحه PDF | دانلود رایگان |

Bi3.95Er0.05Ti3O12 (BErT) thin films were prepared on flexible polyimide (PI) substrates at room temperature by pulsed laser deposition. These BErT thin films deposited under low oxygen pressures are dense, uniform, and crack-free with an amorphous structure. The highly flexible thin film with a thickness of about 160Â nm deposited under 3Â Pa oxygen pressure shows excellent dielectric characteristics, such as a dielectric constant of 51 and a dielectric loss of 0.025, and a maximum capacitance density of 237Â nF/cm2 at 1Â kHz. When it is curved at different curvature radii (by applying external deformation), the thin film still remains superior dielectric performance. In addition, the thin film also shows good dielectric aging characteristic (or thermal stability) and high optical transparency. BErT thin films can find applications in flexible optoelectronic devices and embedded capacitors.
⺠Amorphous Bi3.95Er0.05Ti3O12 (BErT) films were prepared on flexible polyimide. ⺠The flexible BErT films show excellent dielectric characteristics. ⺠Curved BErT films still remain superior dielectric performance. ⺠The BErT films show good dielectric aging effect and high optical transparency.
Journal: Applied Surface Science - Volume 258, Issue 14, 1 May 2012, Pages 5323-5327