کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366007 | 1388342 | 2007 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Morphological and micro-Raman investigations on Ar+-ion irradiated nanostructured GaAs surface Morphological and micro-Raman investigations on Ar+-ion irradiated nanostructured GaAs surface](/preview/png/5366007.png)
Low energy Ar+-ion irradiation at normal incidence is used to fabricate nanostructured GaAs surface. Atomic force microscopy (AFM) images reveal the formation of GaAs surface nanodots with an average size of about 25-35Â nm. The swelling of irradiated surface is observed at a higher energy due to the ion beam-induced porosity in the amorphized GaAs surface. Micro-Raman scattering shows a gradual increase in the downward shift and line shape broadening of optical phonon modes from the nanostructured GaAs prepared with increasing ion dose and beam energy. The rapid broadening of the transverse-optical phonon mode at a higher energy and dose represents the onset of plastic deformation of the irradiated surface. Furthermore, the influence of rapid thermal annealing (RTA) shows a reverse LO and TO phonon peakshift and the change in the lineshape due to reduction of the amorphous disorder.
Journal: Applied Surface Science - Volume 253, Issue 10, 15 March 2007, Pages 4531-4536