Electronic structure and electron dynamics at the GaSb(0 0 1) surface studied by femtosecond pump-and-probe pulsed laser photoemission spectroscopy

Transiently excited electron states at the GaSb(0 0 1) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at ∼250 meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be ∼11 ps, associated with rapid carrier diffusion.