کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366589 | 1388351 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Self-consistent theory for the built-in voltage in metal-organic semiconductor-metal structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Self-consistent theory for the built-in voltage in metal-organic semiconductor-metal structures Self-consistent theory for the built-in voltage in metal-organic semiconductor-metal structures](/preview/png/5366589.png)
چکیده انگلیسی
A self-consistent theory for calculation of built-in voltage (Ubi) of metal-organic semiconductor-metal (MOSM) structures is developed based on Gaussian energy distribution of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO). It is shown that the built-in voltage depends not only on the work function difference of the two electrodes, but also on the mean energy level of HOMO and LUMO, as well as the Gaussian width of the energy distribution. The theory predicts that the spreading of HOMO and LUMO levels will results in an increase of Ubi, and that Ubi decreases with increasing temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 18, 30 June 2009, Pages 8010-8013
Journal: Applied Surface Science - Volume 255, Issue 18, 30 June 2009, Pages 8010-8013
نویسندگان
Ying-quan Peng, Wei-min Meng, Run-sheng Wang, Chao-zhu Ma, Xun-shuan Li, Hong-wei Xie, Rong-hua Li, Ming Zhao, Jian-ting Yuan, Ying Wang,