کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5366762 1388354 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface
چکیده انگلیسی

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH3 molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH3 impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 20, 15 August 2007, Pages 8517-8523
نویسندگان
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