کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367067 | 1388360 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum](/preview/png/5367067.png)
A structure of Cu/ITO(10 nm)/Si was first formed and then annealed at various temperatures for 5 min in a rapid thermal annealing furnace under 10â2 Torr pressure. In Cu/ITO(10 nm)/Si structure, the ITO(10 nm) film was coated on Si substrate by sputtering process and the Cu film was deposited on ITO film by electroplating technique. The various Cu/ITO(10 nm)/Si samples were characterized by a four-point probe, a scanning electron microscope, an X-ray diffractometer, and a transmission electron microscope. The results showed that when the annealing temperature increases near 600 °C the interface between Cu and ITO becomes unstable, and the Cu3Si particles begin to form; and when the annealing temperature increases to 650 °C, a good many of Cu3Si particles about 1 μm in size form and the sheet resistance of Cu/ITO(10 nm)/Si structure largely increases.
Journal: Applied Surface Science - Volume 255, Issue 16, 30 May 2009, Pages 7357-7360