کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367095 | 1388361 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characteristics of UV photodetectors based on ZnO/diamond film structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ultraviolet photodetectors based on ZnO/diamond film structure were fabricated. The properties of Au/ZnO contacts and effects of grain sizes on the electrical characteristics of photodetectors were discussed. Due to the bombardment with Au atoms and the annealing process, fine ohmic contacts were formed between Au electrodes and ZnO films. Dark currents and photocurrents of the photodetectors were related to sputtering time and the grain size of ZnO films. For the photodetector with a bigger grain size, a lower dark current and a higher photocurrent were obtained under 10Â V bias voltage. The time-dependent photocurrent confirmed the carrier trapping effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 12, 15 April 2007, Pages 5218-5222
Journal: Applied Surface Science - Volume 253, Issue 12, 15 April 2007, Pages 5218-5222
نویسندگان
Jianmin Liu, Yiben Xia, Linjun Wang, Qingfeng Su, Weimin Shi,