ALD of ZnO using diethylzinc as metal-precursor and oxygen as oxidizing agent

► The manuscript contains results showing the possibility to grow ZnO with O2 precursor without necessity of plasma reactions. ► XPS and synchrotron data show the preparation of ALD films of ZnO from H2O or O2 and diethylzinc. ► Evidence of O2− interstitials (dumbbell)for O2 preparation.