کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367453 | 1388366 | 2007 | 5 صفحه PDF | دانلود رایگان |
The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si surface. The barrier height and ideality factor values of 0.67 ± 0.02 eV and 2.02 ± 0.03 for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface states and their relaxation time have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics in the energy range of ((0.42 ± 0.02) â Ev)-((0.66 ± 0.02) â Ev) eV. The interface state density values ranges from (4.21 ± 0.14) Ã 1013 to (3.82 ± 0.24) Ã 1013 cmâ2 eVâ1. Furthermore, the relaxation time ranges from (1.65 ± 0.23) Ã 10â5 to (8.12 ± 0.21) Ã 10â4 s and shows an exponential rise with bias from the top of the valance band towards the midgap.
Journal: Applied Surface Science - Volume 253, Issue 7, 30 January 2007, Pages 3464-3468