کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367545 | 1388368 | 2009 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Morphological and optical properties of silicon thin films by PLD Morphological and optical properties of silicon thin films by PLD](/preview/png/5367545.png)
Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10â6 mbar in the temperature range from 400 to 800 °C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J Ã cmâ2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated.Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature.
Journal: Applied Surface Science - Volume 255, Issue 10, 1 March 2009, Pages 5299-5302