کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367622 | 1388369 | 2006 | 8 صفحه PDF | دانلود رایگان |
The current-voltage (I-V) characteristics of Al/Rhodamine-101/p-Si/Al contacts have been measured at temperatures ranging from 280 to 400 K at 20 K intervals. A barrier height (BH) value of 0.817 eV for the Al/Rh101/p-Si/Al contact was obtained at the room temperature that is significantly larger than the value of 0.58 eV of the conventional Al/p-Si Schottky diode. While the barrier height Φb0 decreases the ideality factors (n) become larger with lowering temperature. The high values of n depending on the sample temperature may be ascribed to decrease of the exponentially increase rate in current due to space-charge injection into Rh101 thin film at higher voltage. Therefore, at all temperatures, it has been seen that the I-V characteristics show three different regions, the ohmic behavior at low voltages, and the space charge limited current with an exponential distribution of traps at high voltages.
Journal: Applied Surface Science - Volume 252, Issue 6, 15 January 2006, Pages 2209-2216