کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367728 | 1388372 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: New fabrication of a strained Si/Si1âyGey dual channel on a relaxed Si1âxGex virtual substrate using a Ge-rich layer formed by oxidation New fabrication of a strained Si/Si1âyGey dual channel on a relaxed Si1âxGex virtual substrate using a Ge-rich layer formed by oxidation](/preview/png/5367728.png)
This paper presents a new method of forming a Si/SiGe dual channel on a Si0.8Ge0.2 virtual substrate. Generally, in a CMOS process using a Si/SiGe dual channel, due to several processes involving ion-implantation, annealing and dry-etching after the deposition of the Si/SiGe dual channel, the surface can be damaged, leading to reduced electrical properties. However, if the dual channel is formed during a specific stage of the CMOS process, the defects of the dual channel can be reduced and the thermal stability will be excellent. Therefore, in this paper, a method for minimizing the defects of the dual channel is presented. This method uses the segregation of the Ge in the oxidation process of a SiGe. A Si/SiGe dual channel formed using this method achieved results that were identical to a dual channel deposited using the chemical vapor deposition (CVD) method.
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6025-6029