Keywords: سیلیکون ژرمانیوم; Thin-film Si; Silicon-germanium; Multijunctions; Alloyed materials; Light management;
مقالات ISI سیلیکون ژرمانیوم (ترجمه نشده)
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An atomistic investigation of the composition dependence in SiGe alloys during Solid Phase Epitaxial Regrowth
Keywords: سیلیکون ژرمانیوم; SiGe; Silicon-germanium; SPER; Solid phase epitaxial regrowth; Alloys; LKMC;
Reactions of disilane with the deuterium-terminated Ge(1Â 0Â 0) 2Â ÃÂ 1 surface
Keywords: سیلیکون ژرمانیوم; Thermal desorption spectroscopy; Raman scattering spectroscopy; Molecule-solid reactions; Single crystal surfaces; Semiconducting surfaces; Surface passivation; Silicon-germanium; Disilane;
Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0Â 0Â 1) interfaces
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; Sulfur passivation; Atomic layer deposition; Aluminum oxide;
Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; Scanning tunneling microscopy; Scanning tunneling spectroscopy; X-ray photoelectron spectroscopy; Atomic hydrogen; Atomic layer deposition;
Thin-film Si1âxGex HIT solar cells
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; Solar; Thin-film; Dislocations;
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; Plasma post-nitridation; HfO2/Al2O3; MOS interface; Capacitance-voltage characteristics; Conductance method;
Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; SiGe; SiGe-On-Insulator (SGOI); MOSFET; 1/f Noise; Slow oxide trap densities;
The electron-hole bilayer tunnel FET
Keywords: سیلیکون ژرمانیوم; Band-to-band tunneling; EHBTFET; Electron-hole bilayer; Field-effect transistor; Logic devices; Silicon-germanium; Subthreshold slope; Tunnel FET; Tunnel transistor;
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance
Keywords: سیلیکون ژرمانیوم; CMOS; MOSFET; Dual channel; Integration; Silicon-germanium; SOI; Strain; High-K; Metal gate; Mobility; Access resistance; Low-frequency noise;
Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers
Keywords: سیلیکون ژرمانیوم; Strained silicon; Thermal oxidation; Silicon-germanium; Oxide semiconductor interface;
Optimization of SiGe bandgap-based circuits for up to 300 °C operation
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; BiCMOS; SiGe HBT; High temperatures; Bandgap voltage reference; Temperature sensor;
Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
Keywords: سیلیکون ژرمانیوم; Heterojunction bipolar transistor; Silicon-germanium; 2D TCAD; Maximum oscillation frequency; Cutoff frequency;
Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics
Keywords: سیلیکون ژرمانیوم; 61.72.uf; 61.05.cp; 81.16.Ta; 62.20.Qp; Silicon-germanium; X-ray diffraction; Atomic force microscope; Hardness;
Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; Ultrahigh-vacuum chemical vapor deposition; Atomic force microscopy; Hardness;
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs
Keywords: سیلیکون ژرمانیوم; Heterojunction Bipolar Transistor (HBT); Silicon-germanium; Cut-off frequency; Selective epitaxial growth; Implantation; Collector;
Effect of annealing under stress on defect structure of Si-Ge
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; Annealing; Defect structure; Stress;
New fabrication of a strained Si/Si1âyGey dual channel on a relaxed Si1âxGex virtual substrate using a Ge-rich layer formed by oxidation
Keywords: سیلیکون ژرمانیوم; 68.35.Dv; 61.66.Dk; 68.35.Bs; Silicon-germanium; Strained dual channel; Oxidation; CMOS;
Proton-induced SEU in SiGe digital logic at cryogenic temperatures
Keywords: سیلیکون ژرمانیوم; Silicon-germanium; Radiation effects; Single event upset; Proton; Radiation hardening by design; RHBD; SEU; SiGe HBT;
A numerical approach to quantify self-ordering among self-organized nanostructures
Keywords: سیلیکون ژرمانیوم; Growth; Semiconductor-semiconductor heterostructures; Silicon-germanium; Nanostructures; Nucleation; Monte Carlo simulations; In situ characterization; Low-energy electron microscopy (LEEM);
Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealing
Keywords: سیلیکون ژرمانیوم; Molecular beam epitaxy (MBE); Quantum dots; Coarsening; Silicon-germanium;
Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories
Keywords: سیلیکون ژرمانیوم; 85.40.âe; 81.05.Gc; Silicon-germanium; Electrode; Chalcogenide; Memory; Resistivity; Joule heat;
Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(0 0 1)
Keywords: سیلیکون ژرمانیوم; 61.10.Nz; 68.55.Jk; Nickel silicide; Silicon-germanium; Silicidation; Strain relaxation;
Size dependence of lattice parameter for SixGe1âx nanoparticles
Keywords: سیلیکون ژرمانیوم; Nanoparticles; Silicon-germanium; Lattice parameter measurements; Amorphous substrate; Transmission electron microscopy (TEM);
Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs
Keywords: سیلیکون ژرمانیوم; SiGe HBTs; Silicon-germanium; Heterojunction bipolar transistor; Cryogenic; Low temperature; Negative differential resistance; Hysteresis; tunneling; Shockley-Read-Hall recombination;
Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2
Keywords: سیلیکون ژرمانیوم; 73.40.V; 73.40.C; Silicon-germanium; Indium tin oxide; Resistivity; Sputtering;
Evaluating and designing the optimal 2D collector profile for a 300Â GHz SiGe HBT
Keywords: سیلیکون ژرمانیوم; SiGe; Silicon-germanium; HBT; Hetero bipolar junction transistor; SIC; Selectively implanted collector; TCAD; Process simulation; Device simulation; Implant optimization; Current distribution; Depletion zone;
A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process
Keywords: سیلیکون ژرمانیوم; 81.15.Gh; 85.40.âe; Strained silicon; Silicon-germanium; Heteroepitaxy;