کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366303 | 1388347 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(0 0 1) Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(0 0 1)](/preview/png/5366303.png)
Strain relaxation of the epitaxial SiGe layer and Ge diffusion during nickel silicidation by rapid thermal annealing the structure of Ni(â 14 nm)/cap-Si(â 26 nm)/Si0.83Ge0.17/Si(0 0 1) at the elevated annealing temperatures, TA, were investigated by X-ray diffraction analyses of high-resolution Ï-2θ scan and reciprocal space mapping. The analyses showed a much larger strain relaxation at a lower TA and a reduction in Ge content in the SiGe layer of Ni/SiGe/Si(0 0 1) after thermal annealing compared to the case of cap-Si/SiGe/Si(0 0 1). The results indicate that the strain relaxation of the SiGe layers in NiSi/SiGe/Si(0 0 1) is related to the phenomena of NiSi agglomeration and penetration into the SiGe layer during silicidation at elevated anneal temperatures â¥750 °C. At elevated TA â¥Â 750 °C, Ge diffused into the intact cap-Si area during silicidation.
Journal: Applied Surface Science - Volume 252, Issue 15, 30 May 2006, Pages 5326-5330