Optimization of SiGe bandgap-based circuits for up to 300 °C operation

► Devices in commercial bulk SiGe BiCMOS platform characterized to demonstrate acceptable performance up to 300 °C. ► Proven SiGe BGR circuit designed for wide temperature operation verified to work up to 300 °C. ► High temperature device and circuit level compensation techniques shown to significantly improve SiGe BGR performance from −225 °C to 300 °C. ► Non-optimized SiGe temperature sensor circuit shown to compare favorably with commercially available temp sensors up to 225 °C.