Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)

Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 652, October 2016, Pages 322-333

Sang Wook Park, Hyonwoong Kim, Evgueni Chagarov, Shariq Siddiqui, Bhagawan Sahu, Naomi Yoshida, Jessica Kachian, Randall Feenstra, Andrew C. Kummel,