Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration

A 2D TCAD based device architecture exploration of SiGe:C NPN HBTs is presented. Two novel and one conventional self-aligned architectures are explored by process and device simulation. All these three architectures show their capability of achieving maximum oscillation frequency (fmax) of 500 GHz for scaled layout rules.