Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

► Low frequency noise behavior of compressively strained SiGe on insulator MOSFETs. ► cSi0.75Ge0.25 and cSi0.65Ge0.35 p- and n-channel, TiN/HfO2/SiO2 gate stacks. ► In PMOSFET devices front and back interface current noise follow the ΔN model. ► In NMOSFET devices front and back interface current noise follow the ΔN-Δμ model. ► Impact of the back interface noise source on the front interface current.