کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812084 | 1518106 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2 Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2](/preview/png/9812084.png)
چکیده انگلیسی
Nonalloyed transparent ohmic contacts of indium tin oxide (ITO) to p-type Si0.8Ge0.2 layer with and without a Si-capping layer were examined. The ITO films and the p-type Si0.8Ge0.2 layers were deposited by using sputtering and ultrahigh-vacuum chemical vapor deposition, respectively. It is shown that the ITO/p-type Si0.8Ge0.2 contact structure exhibits a specific contact resistance of 2.26 Ã 10â 5 Ω cm2 as compared to that of 2.78 Ã 10â 2 Ω cm2 for the ITO/Si/p-type Si0.8Ge0.2 contact structure. Possible mechanisms are proposed. The ITO film exhibits a transmittance more than 85% within a wavelength range from 800 to 1400 nm. Therefore, the ITO film has a high potential for fabricating near infrared optoelectronic devices using Si1âxGex material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 493, Issues 1â2, 22 December 2005, Pages 203-206
Journal: Thin Solid Films - Volume 493, Issues 1â2, 22 December 2005, Pages 203-206
نویسندگان
J.D. Hwang, W.T. Chang, K.H. Hseih, G.H. Yang, C.Y. Wu, P.S. Chen,