The electron-hole bilayer tunnel FET

► We propose a novel tunnel FET called the electron-hole bilayer tunnel FET. ► The device exploits carrier tunneling through a bias-induced electron-hole bilayer. ► Device principle and performances are studied by 2D numerical simulations. ► Device performances are compared for silicon and germanium implementations. ► Nearly ideal average subthreshold slope and high ION/IOFF ratio are obtained.