کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
749201 | 894814 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Proton-induced SEU in SiGe digital logic at cryogenic temperatures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
We present the first experimental results confirming the increased SEE sensitivity of SiGe digital bipolar logic circuits operating in a 63Â MeV proton environment at cryogenic temperatures. A 3Ã increase in both the error-event and bit-error cross sections is observed as the circuits are cooled from 300Â K to 77Â K, with error signature analyses indicating corresponding increases in the average number of bits-in-error and error length over data rates ranging from 50Â Mbit/s to 4Â Gbit/s. Single-bit-errors dominate the proton-induced SEU response at both 300Â K and 77Â K, as opposed to the multiple-bit-errors seen in the heavy-ion SEU response. Temperature dependent substrate carrier lifetime measurements, when combined with calibrated 2Â D DESSIS simulations, suggest that the increased transistor charge collection at low temperature is a mobility driven phenomenon. Circuit-level RHBD techniques are shown to be very efficient in mitigating the proton- induced SEU at both 300Â K and 77Â K over the data rates tested. These results suggest that the circuit operating temperature must be carefully considered during component qualification for SEE tolerance and indicate the need for broad-beam heavy-ion testing at low temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 52, Issue 10, October 2008, Pages 1652-1659
Journal: Solid-State Electronics - Volume 52, Issue 10, October 2008, Pages 1652-1659
نویسندگان
Akil. K. Sutton, Kurt Moen, John D. Cressler, Martin A. Carts, Paul W. Marshall, Jonathan A. Pellish, Vishwa Ramachandran, Robert A. Reed, Michael L. Alles, Guofu Niu,