کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5424478 | 1395826 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reactions of disilane with the deuterium-terminated Ge(1Â 0Â 0) 2Â ÃÂ 1 surface
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کلمات کلیدی
surface passivation - passivation سطحDisilane - دیلانSemiconducting surfaces - سطوح نیمه هادیSingle crystal surfaces - سطوح کریستال تکSilicon–germanium - سیلیکون ژرمانیومThermal desorption spectroscopy - طیف سنجی جذب حرارتیRaman scattering spectroscopy - طیف سنجی پراکندگی رامانMolecule–solid reactions - واکنش های جامد مولکولی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have studied the reaction of molecular disilane with the germanium monodeuteride surface at 300Â K. Temperature-programmed desorption and Raman spectroscopy suggest that the product of the reaction is a GeHD terminated surface. Ion scattering and Auger electron spectroscopies show that silicon does not accumulate on the surface but that it is incorporated into the near-surface (â¼10Â Ã
) region. We propose a mechanism involving silylene (SiH2) insertion and subsequent silicon indiffusion. We have also investigated the reactivity of this surface with disilane that has been activated by electron impact, producing a variety of dissociation products that were detected by mass spectrometry. The reactions of these radicals with the surface produced a complex mixture of surface species that included GeH, GeD and SiHx, as identified by Raman spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 602, Issue 12, 15 June 2008, Pages 2009-2016
Journal: Surface Science - Volume 602, Issue 12, 15 June 2008, Pages 2009-2016
نویسندگان
Grant Underwood, Lynette Keller Ballast, Alan Campion,