کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367750 | 1388372 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method](/preview/png/5367750.png)
چکیده انگلیسی
We investigated the optimum structure for Ti-containing Hf-based high-k gate dielectrics to achieve EOT scaling below 1Â nm. TiO2/HfSiO/SiO2 trilayer and HfTiSiO/SiO2 bilayer structures were fabricated by a newly developed in-situ PVD-based method. We found that thermal diffusion of Ti atoms to SiO2 underlayers degrades the EOT-Jg characteristics. Our results clearly demonstrated the impact of the trilayered structure with TiO2 capping for improving EOT-Jg characteristics of the gate stack. We achieved an EOT scaling of 0.78Â nm as well as reduced gate leakage of 7.2Â ÃÂ 10â2Â A/cm2 for a TiO2/HfSiO/SiO2 trilayered high-k dielectric while maintaining the electrical properties at the bottom interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6119-6122
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6119-6122
نویسندگان
Hiroaki Arimura, Shinya Horie, Yudai Oku, Takashi Minami, Naomu Kitano, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe,