کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367770 1388372 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Quantum cascade multi-electron injection into Si-quantum-dot floating gates embedded in SiO2 matrices
چکیده انگلیسی

The use of silicon-quantum-dots (Si-QDs) as floating gates in metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been attracting great attention. It has been reported that large decreases in drain current are observed within a very short time in Si-QDs memories, indicating that the collective motion of electrons occurs during electron injection into Si-QDs. In this study, we present a theoretical report which indicates that the interaction length between QDs is about 5-10 nm. From these results, we propose a mechanism for “quantum cascade multi-electron injection”.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6199-6202
نویسندگان
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