کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367784 | 1388372 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics](/preview/png/5367784.png)
چکیده انگلیسی
We investigate the hole transport in p-channel field-effect transistors doped with boron, at low temperatures (6-28Â K). In transistors with a relatively large dimension, we observe the acceptor-mediated hopping and carrier freezeout, both of which are strongly influenced by the gate bias. In nanoscale transistors, these features turn into single-charge tunneling, i.e., the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, indicating that what we have observed is single-charge-transistor operation by a single-acceptor quantum dot.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6252-6256
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6252-6256
نویسندگان
Y. Ono, M.A.H. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi,