کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5367793 1388372 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Clarification of band structure at metal-diamond contact using device simulation
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Clarification of band structure at metal-diamond contact using device simulation
چکیده انگلیسی

The mechanism of low-threshold electron emission from heavily nitrogen-doped diamond was clarified using computer simulation. Possibility of internal field emission at metal-diamond contact was evaluated expecting that the electron injection can explain the low-threshold electron emission. As a result, it was proved that electron injection could be achieved even for a deep donor of 1.7 eV, when donor concentration exceeded 1e20 cm−3. The result was in good agreement with previous experiments.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 19, 30 July 2008, Pages 6285-6288
نویسندگان
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