کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367820 | 1388374 | 2011 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires](/preview/png/5367820.png)
Zinc oxide/zinc germanium oxide (ZnO/Zn2GeO4) porous-like thin film and wires has been fabricated by simple thermal evaporation method at temperature about 1120 °C for 2.5 h. The structural and optical properties of the porous-like-thin film and wires have been investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Metal semiconductor metal (MSM) photodetector structure was used to evaluate the electrical characteristics by using current-voltage (I-V) measurements. Room temperature photoluminescence spectrum of the sample shows one prominent ultraviolet peak at 378 nm and a shoulder at 370 nm. In addition, broad visible blue emission peak at wavelength 480 nm and green emission peak at 500 nm are also observed. Strong photoelectric properties of the MSM in the UV demonstrated that the porous-like-thin film and wires contribute to its photosensitivity and therefore making ZnO/Zn2GeO4 wires potential photodetector in the shorter wavelength applications.
Research highlightsⶠZinc oxide/Zinc germanium oxide porous-like thin film wires were successfully fabricated using simple thermal evaporation method and the growth mechanisms have been proposed. ⶠThe structures revealed strong spontaneous emission in the UV and weak emission in blue and green regions. ⶠThe structures showed a good response as a MSM photodetector in the UV region.
Journal: Applied Surface Science - Volume 257, Issue 11, 15 March 2011, Pages 4890-4895