کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5367908 | 1388376 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DNA-based organic-on-inorganic semiconductor Schottky structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 Ã 1010 Ω cm representing a p-type conductivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 16, 15 June 2008, Pages 5175-5180
Journal: Applied Surface Science - Volume 254, Issue 16, 15 June 2008, Pages 5175-5180
نویسندگان
Ã. Güllü, M. Ãankaya, Ã. BarıÅ, M. Biber, H. Ãzdemir, M. Güllüce, A. Türüt,