کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5368021 1388383 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of the switching phenomena of TlGaS2 single crystals
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Study of the switching phenomena of TlGaS2 single crystals
چکیده انگلیسی

Single crystals of TlGaS2 were prepared by a special modified Bridgman technique and used to investigate the switching phenomena. The particular interest shown in switching studies of p-type TlGaS2 compound is associated with the possibility of its uses as an effective switching and memory elements in electronic devices. The switching effect observed in such crystal shows a memory character. Using a crystal holder and cryostat we measured the switching phenomenon at different ambient conditions such as temperature, light illumination as well as sample thickness. Pronounced parameters for switching for sample of thickness 0.17 cm were determined from the experimental data such as threshold voltage Vth = 400 V, threshold current Ith = 37 μA, holding voltage Vh = 350 V, holding current Ih = 42.3 × 10−4 A, threshold power Pth = 1.48 × 10−2 W, threshold field Eth = 196.429 V/cm as well as the ratio between the resistance in the off state ROFF to the resistance in the conducting state RON as 130.253. The factors affecting these parameters have also been investigated.

Research highlights▶ TlGaS2 single crystal is grown by locally modified Bridgmen method and its electrical properties were investigated. ▶ It showed a switching effect behavior. ▶ All parameters were extracted. ▶ Our data indicate the possibility of a device application out of this material.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 8, 1 February 2011, Pages 3205-3210
نویسندگان
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