کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368205 | 1388385 | 2007 | 4 صفحه PDF | دانلود رایگان |

Pulsed laser deposition with a Nd:YAG laser was used to grow thin films from a pre-synthesized Ti3SiC2 MAX-phase formulated ablation target on oxidized Si(1Â 0Â 0) and MgO(1Â 0Â 0) substrates. The depositions were carried out in a substrate temperature range from 300 to 900Â K, and the pressure in the deposition chamber ranged from vacuum (10â5Â Pa) to 0.05Â Pa Argon background pressure. The properties of the films have been investigated by Rutherford backscattering spectrometry for film thickness and stoichiometric composition and X-ray diffraction for the crystallinity of the films. The silicon content of the films varied with the energy density of the laser beam. To suppress especially the silicon re-sputtering from the substrate, the energy of the incoming particles must be below a threshold of 20Â eV. Therefore, the energy density of the laser beam must not be too high. At constant deposition energy density the film thickness depends strongly on the background pressure. The X-ray diffraction measurements show patterns that are typical of amorphous films, i.e. no Ti3SiC2 related reflections were found. Only a very weak TiC(2Â 0Â 0) reflection was seen, indicating the presence of a small amount of crystalline TiC.
Journal: Applied Surface Science - Volume 254, Issue 4, 15 December 2007, Pages 1232-1235