کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368235 | 1388388 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrical and optical properties of Ga doped zinc oxide thin films deposited at room temperature by continuous composition spread Electrical and optical properties of Ga doped zinc oxide thin films deposited at room temperature by continuous composition spread](/preview/png/5368235.png)
Ga doped ZnO (GZO) thin films were deposited on glass substrates at room temperature by continuous composition spread (CCS) method. CCS is thin films growth method of various GaxZn1âxO(GZO) thin film compositions on a substrate, and evaluating critical properties as a function position, which is directly related to material composition. Various compositions of Ga doped ZnO deposited at room temperature were explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 1.46 Ã 10â3 Ω cm and an average transmittance above 90% in the 550 nm wavelength region were able to be formed at an Ar pressure of 2.66 Pa and a room temperature. Also, optimized composition of the GZO thin film which had the lowest resistivity and high transmittance was found at 0.8 wt.% Ga2O3 doped in ZnO.
Journal: Applied Surface Science - Volume 256, Issue 21, 15 August 2010, Pages 6219-6223