کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368256 | 1388388 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal stability of ZnO thin film prepared by RF-magnetron sputtering evaluated by thermal desorption spectroscopy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thermal stability of sputter deposited ZnO thin films was evaluated by thermal desorption spectroscopy (TDS). Desorption of Zn was mainly observed from the films deposited at low O2/Ar gas ratio and low RF power. In contrast, O2 desorption was mainly observed from the films deposited at high O2/Ar gas ratio and high RF power. The amount of desorbed O2 from the film increased with increasing the O2/Ar gas flow ratio and the RF power. Furthermore, the desorption temperature of O2 increased with increasing the RF power during the deposition. Thermal stability of the ZnO films was controlled not only by the O2/Ar gas flow ratio, but also applied RF power to the target.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 21, 15 August 2010, Pages 6350-6353
Journal: Applied Surface Science - Volume 256, Issue 21, 15 August 2010, Pages 6350-6353
نویسندگان
Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Chaoyang Li, Takashi Hirao,