کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368499 | 1388399 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water](/preview/png/5368499.png)
چکیده انگلیسی
Tetrakis(ethylmethylamido)hafnium and water are commonly used precursors for atomic layer deposition of HfO2. Using reflection absorption infrared spectroscopy with a buried-metal-layer substrate, we probe surface species present during typical deposition conditions. We observe evidence for thermal decomposition of alkylamido ligands at 320 °C. Additionally, we find that complete saturation of the SiO2 substrate occurs in the first cycle at â100 °C whereas incomplete coverage is apparent even after many cycles at higher temperatures. The use of this technique as an in situ diagnostic useful for process optimization is demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 16, 1 June 2010, Pages 5035-5041
Journal: Applied Surface Science - Volume 256, Issue 16, 1 June 2010, Pages 5035-5041
نویسندگان
Brent A. Sperling, William A. Kimes, James E. Maslar,