کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368561 | 1388400 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Optical characterization of InxGa1âxN alloys Optical characterization of InxGa1âxN alloys](/preview/png/5368561.png)
InGaN layers were grown by molecular beam epitaxy (MBE) either directly on (0 0 0 1) sapphire substrates or on GaN-template layers deposited by metal-organic vapor-phase epitaxy (MOVPE). We combined spectroscopic ellipsometry (SE), Raman spectroscopy (RS), photoluminescence (PL) and atomic force microscopy (AFM) measurements to investigate optical properties, microstructure, vibrational and mechanical properties of the InGaN/GaN/sapphire layers.The analysis of SE data was done using a parametric dielectric function model, established by in situ and ex situ measurements. A dielectric function database, optical band gap, the microstructure and the alloy composition of the layers were derived. The variation of the InGaN band gap with the In content (x) in the 0 < x â¤Â 0.14 range was found to follow the linear law Eg = 3.44-4.5x.The purity and the stability of the GaN and InGaN crystalline phase were investigated by RS.
Journal: Applied Surface Science - Volume 253, Issue 1, 31 October 2006, Pages 254-257