کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368675 | 1388405 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface reaction mechanism of atomic layer deposition of HfO2 on Ge(1 0 0)-2 Ã 1: A density functional theory study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Surface reaction mechanism of atomic layer deposition of HfO2 on Ge(1 0 0)-2 Ã 1: A density functional theory study Surface reaction mechanism of atomic layer deposition of HfO2 on Ge(1 0 0)-2 Ã 1: A density functional theory study](/preview/png/5368675.png)
چکیده انگلیسی
Density functional theory is employed to investigate atomic layer deposition mechanism of HfO2 on Ge(1Â 0Â 0)-2Â ÃÂ 1 surface. Both the HfCl4 and H2O half-reactions proceed through an analogous trapping-mediated mechanism. The neighboring hydroxyl in the reaction of HfCl4 with two Ge-OH* sites has a major effect on the formation of HfCl4 adsorbed complex. In addition, both the Ge and Si reaction pathways are qualitatively similar, however, adsorption of HfCl4 is favorable on Ge than on Si surface hydroxyl sites. By comparison of the reactions of H2O on the different surfaces, the differences in energy are negligible to alter the reaction mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8466-8470
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8466-8470
نویسندگان
Jie Ren, Hong-Liang Lu, Wei Chen, Min Xu, David Wei Zhang,