کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368682 | 1388405 | 2006 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition](/preview/png/5368682.png)
The electrical as well as the structural properties of La2O3 thin films on TiN substrates were investigated. Amorphous stoichiometric La2O3 thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD)3] and H2O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La2O3 film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La2O3 thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 Ã 10â10 and 2.1 Ã 10â8 A/cm2 at ±1 V, respectively.
Journal: Applied Surface Science - Volume 252, Issue 24, 15 October 2006, Pages 8506-8509