کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368949 | 1388414 | 2009 | 4 صفحه PDF | دانلود رایگان |

Cluster size effects of SiO2 thin film formation with size-selected O2 gas cluster ion beams (GCIBs) irradiation on Si surface were studied. The cluster size varied between 500 and 20,000Â molecules/cluster. With acceleration voltage of 5Â kV, the SiO2 thickness was close to the native oxide thickness by irradiation of (O2)20,000 (0.25Â eV/molecule), or (O2)10,000 (0.5Â eV/molecule). However, it increased suddenly above 1Â eV/molecule (5000Â molecules/cluster), and increased monotonically up to 10Â eV/molecule (500Â molecules/cluster). The SiO2 thickness with 1 and 10Â eV/molecule O2-GCIB were 2.1 and 5.0Â nm, respectively. When the acceleration voltage was 30Â kV, the SiO2 thickness has a peak around 10Â eV/molecule (3000Â molecules/cluster), and it decreased gradually with increasing the energy/molecule. At high energy/molecule, physical sputtering effect became more dominant process than oxide formation. These results suggest that SiO2 thin film formation can be controlled by energy per molecule.
Journal: Applied Surface Science - Volume 256, Issue 4, 30 November 2009, Pages 1106-1109