کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5368967 | 1388414 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Zn1âxMgxO/ZnO heterostructures studied by Kelvin probe force microscopy conjunction with probe characterizer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Zn1âxMgxO/ZnO heterostructures studied by Kelvin probe force microscopy conjunction with probe characterizer Zn1âxMgxO/ZnO heterostructures studied by Kelvin probe force microscopy conjunction with probe characterizer](/preview/png/5368967.png)
چکیده انگلیسی
The surface potential of Zn1âxMgxO/ZnO heterostructure grown by radical source molecular beam epitaxy was measured by Kelvin force microscopy (KFM). A clear correlation was observed between the topographic image and the surface potential of Zn0.56Mg0.44O/ZnO heterostructure. The potential area around the surface pits was about 60Â mV lower than that of the surrounding region, which suggests the effects of the pits on the electrical properties of the potential layer. In order to guarantee the accuracy of measurement, the probe shape was analyzed by probe characterizer and using Au thin films as a potential standard.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 4, 30 November 2009, Pages 1180-1183
Journal: Applied Surface Science - Volume 256, Issue 4, 30 November 2009, Pages 1180-1183
نویسندگان
Te-Wei Chiu, Hiroshi Itoh, Hitoshi Tampo, Shigeru Niki,