کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5369180 1388423 2009 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications
چکیده انگلیسی

Poly-crystalline germanium (poly-Ge) thin films have potential for lowering the manufacturing cost of photovoltaic devices especially in tandem solar cells, but high crystalline quality would be required. This work investigates the crystallinity of sputtered Ge thin films on glass prepared by in situ growth and ex situ solid-phase crystallization (SPC). Structural properties of the films were characterized by Raman, X-ray diffraction and ultraviolet-visible reflectance measurements. The results show the transition temperature from amorphous to polycrystalline is between 255 °C and 280 °C for in situ grown poly-Ge films, whereas the transition temperature is between 400 °C and 500 °C for films produced by SPC for a 20 h annealing time. The in situ growth in situ crystallized poly-Ge films at 450 °C exhibit significantly better crystalline quality than those formed by solid-phase crystallization at 600 °C. High crystalline quality at low substrate temperature obtained in this work suggests the poly-Ge films could be promising for use in thin film solar cells on glass.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 15, 15 May 2009, Pages 7028-7035
نویسندگان
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