کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5369265 1388425 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterization of β-SiC films obtained by fs laser ablation
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Growth and characterization of β-SiC films obtained by fs laser ablation
چکیده انگلیسی

We achieved the growth of cubic silicon carbide (SiC) films on (1 0 0)Si substrates by pulsed laser deposition (PLD) at moderate temperatures such as 750 °C, from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The morphology of deposited films is dominated by columns nucleated from a thin nanostructured beta silicon carbide (β-SiC) interface layer. The combined effects of columnar growth, tilted facets of the emerging columns and the presence of particulates on the film surface, lead to a rather rough surface of the films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 13, 30 April 2006, Pages 4672-4677
نویسندگان
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