کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369441 | 1388433 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures](/preview/png/5369441.png)
ZrOxNy thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrOxNy thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrOxNy thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrOxNy thin films and therefore, the decreased optical band gap (Eg) values as a result of the increased valence-band maximum and lowered conduction-band minimum.
Journal: Applied Surface Science - Volume 254, Issue 17, 30 June 2008, Pages 5439-5444