کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369766 | 1388451 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etching reaction of methylchloride molecule on the GaAs (0 0 1)-2 Ã 4 surface
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Adsorption process of methylchloride (CH3Cl) on the GaAs (0Â 0Â 1)-2Â ÃÂ 4 surface was studied by a scanning tunnelling microscopy (STM) measurement. The arsenic rich 2Â ÃÂ 4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed to a supersonic molecular beam of CH3Cl with a kinetic energy of 0.06Â eV. New bright spots appeared on the CH3Cl exposed surface. They were largely observed at the “B-type” step edge and divided into two types according to their locations. It was suggested that new spots were due to weakly adsorbed CH3Cl molecules without any dissociation. The adsorption mechanism of CH3Cl molecule was also studied by an ab initio Hartree-Fock calculation, which explained the experimental results well.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 13, 30 April 2007, Pages 5914-5919
Journal: Applied Surface Science - Volume 253, Issue 13, 30 April 2007, Pages 5914-5919
نویسندگان
M. Ozeki, Y. Iwasa, Y. Shimizu,