کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5369881 | 1388460 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films](/preview/png/5369881.png)
چکیده انگلیسی
In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B+, B3+) are presented. The applied ion energies were in the range of 15-45Â keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/vis spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2Â ÃÂ 1016Â cmâ2). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06Â eV for irradiated films by B3+ ions and 0.7Â eV for irradiated films by B+ ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 8, 15 February 2007, Pages 4029-4035
Journal: Applied Surface Science - Volume 253, Issue 8, 15 February 2007, Pages 4029-4035
نویسندگان
B. TodoroviÄ-MarkoviÄ, I. DraganiÄ, D. VasiljeviÄ-RadoviÄ, N. RomÄeviÄ, M. RomÄeviÄ, M. DramiÄanin, Z. MarkoviÄ,