کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5369907 1388465 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films
چکیده انگلیسی

The effects of HfOxNy on the electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10−8 A/cm2 at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfOxNy film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfOxNy or HfO2 structure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 5, 30 December 2006, Pages 2421-2424
نویسندگان
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