Electrochemical luminescence of n-type ZnO semiconductor electrodes doped with rare earth metals under the anodic polarization

Electrochemical luminescence (ECL) at n-type ZnO semiconductor electrode was measured under anodic polarization. Scanning the potential imposed on the ZnO electrode, emission was suddenly observed around +20 V. Using the ZnO electrodes doped with rare earth metal ions as Sm3+, Eu3+, Dy3+, Ho3+ and Er3+, much brighter emission was obtained than the ECL of non-doped ZnO. These emission spectra are ascribed to the rare earth metal ions, respectively. This result would show that emission centers of doped ions were selectively excited by electrons that were injected from electrolyte to the electrode by avalanche breakdown under strong anodic bias on the ZnO.