کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5370087 | 1388470 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and electrical properties of (Zr, Sn)TiO4 thin film deposited on Si(1 0 0) using a sol-gel process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Polycrystalline zirconium tin titanate (Zr0.8Sn0.2TiO4, ZST) thin films with thickness of 81 nm were deposited successfully along the (1 0 0) on a p-type Si substrate by an improved sol-gel method. The deposited films were crystallized when annealing temperature was up to 450 °C. The thickness and compositions of the interface layer between the ZST films and Si substrate were identified by high-resolution transmission electron microscope (HRTEM). The electrical properties such as leakage current density, flat-band voltage and capacitance of the films were measured and discussed. Furthermore, the mechanism of the leakage current was also investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 253, Issue 4, 15 December 2006, Pages 2203-2207
Journal: Applied Surface Science - Volume 253, Issue 4, 15 December 2006, Pages 2203-2207
نویسندگان
Ru-Yuan Yang, Yan-Kuin Su, Min-Hang Weng, Yung-Shou Ho,