کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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5370410 | 1388494 | 2006 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE](/preview/png/5370410.png)
Thin InP layers were grown by metalorganic vapor phase epitaxy on the ternary compound GaAs0.5Sb0.5 lattice matched to InP(1â0â0). The heterojunctions were studied with in situ reflectance anisotropy spectroscopy and benchmarked in ultrahigh vacuum with ultraviolet and X-ray photoelectron spectroscopy and low energy electron diffraction with regard to the sharpness of the interface. During growth of GaAs0.5Sb0.5 an Sb-rich (1Ã3)-like reconstruction was observed and during stabilization with TBAs an As-rich c(4Ã4) reconstruction. These two different reconstructions of GaAs0.5Sb0.5(1â0â0), well-known from the binaries GaSb(1â0â0) and GaAs(1â0â0) respectively, were used for preparing InP/GaAs0.5Sb0.5 heterojunctions. The RA spectra of thin heteroepitaxial InP layers were compared to a well-established RA spectrum of MOVPE-prepared homoepitaxial, (2Ã1)-like reconstructed P-rich InP(1â0â0), that was used as a reference spectrum of a well defined surface. Growing InP on the c(4Ã4) reconstructed GaAsSb(1â0â0) surface resulted in a significantly sharper interface than InP growth on (1Ã3) reconstructed GaAsSb(1â0â0).
Journal: Applied Surface Science - Volume 252, Issue 12, 15 April 2006, Pages 4033-4038