کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5377032 1389377 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The structures, stability, and photoelectron spectroscopy of GaPX− (X = C, Si, Ge; O, S; P and Ga) clusters
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The structures, stability, and photoelectron spectroscopy of GaPX− (X = C, Si, Ge; O, S; P and Ga) clusters
چکیده انگلیسی
The equilibrium geometries and vibrational frequencies of GaPX− and GaPX (X = C, Si, Ge; O, S; P and Ga) have been studied by hybrid B3LYP functional at cc-PVTZ and aug-cc-PVTZ levels. The results predict that the most stable structure of GaPC− is linear while the others are trigonal. As for GaPX (X = C, Si, Ge; O, S; P and Ga), the ground structures of GaPC and GaPO are linear while the others are trigonal. The adiabatic electron affinities (AEAs) and vertical detachment energies (VDEs) of GaPX− are calculated at B3LYP/aug-cc-PVTZ level. And the order of the AEAs and VDEs of GaPX− are C < O < Ge ≈ Si < P < S < Ga and C < Ge ≈ Si < P < O < S < Ga, respectively. GaPC exhibits the lowest adiabatic electron affinities of all the clusters studied, indicating a particularly stable neutral species.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Physics - Volume 327, Issue 1, 21 August 2006, Pages 144-150
نویسندگان
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